32k x 16 static ram cy7c1020b cypress semiconductor corporation ? 198 champion court ? san jose , ca 95134-1709 ? 408-943-2600 document #: 38-05171 rev. *c revised may 26, 2006 features ?high speed ?t aa = 12, 15 ns ? cmos for optimum speed/power ? low active power ? 825 mw (max.) ? low cmos standby power ? 16.5 mw (max.) ? automatic power-down when deselected ? independent control of upper and lower bits ? available in lead-free and non-lead-free 44-pin tsop ii and 44-pin (400-mil) soj packages functional description the cy7c1020b is a high-per formance cmos static ram organized as 32,768 words by 16 bits. this device has an automatic power-down feature that significantly reduces power consumption when deselected. writing to the device is accomplished by taking chip enable (ce ) and write enable (we ) inputs low. if byte low enable (ble ) is low, then data from i/o pins (i/o 1 through i/o 8 ), is written into the location specified on the address pins (a 0 through a 14 ). if byte high enable (bhe ) is low, then data from i/o pins (i/o 9 through i/o 16 ) is written into the location specified on the address pins (a 0 through a 14 ). reading from the device is accomplished by taking chip enable (ce ) and output enable (oe ) low while forcing the write enable (we ) high. if byte low enable (ble ) is low, then data from the memory location specified by the address pins will appear on i/o 1 to i/o 8 . if byte high enable (bhe ) is low, then data from memory will appear on i/o 9 to i/o 16 . see the truth table at the back of this data sheet for a complete description of read and write modes. the input/output pins (i/o 1 through i/o 16 ) are placed in a high-impedance state when the device is deselected (ce high), the outputs are disabled (oe high), the bhe and ble are disabled (bhe , ble high), or during a write operation (ce low, and we low). the cy7c1020b is available in standard 44-pin tsop type ii and 44-pin 400-mil-wide soj packages. we logic block diagram pin configuration 1 2 3 4 5 6 7 8 9 10 11 14 31 32 36 35 34 33 37 40 39 38 top view soj / tsop ii pinout 12 13 41 44 43 42 16 15 29 30 v cc a 4 a 14 a 13 a 12 nc nc a 3 oe v ss a 5 i/o 16 a 2 ce i/o 3 i/o 1 i/o 2 bhe nc a 1 a 0 18 17 20 19 i/o 4 27 28 25 26 22 21 23 24 nc v ss i/o 7 i/o 5 i/o 6 i/o 8 a 6 a 7 ble v cc i/o 15 i/o 14 i/o 13 i/o 12 i/o 11 i/o 10 i/o 9 a 8 a 9 a 10 a 11 32k x 16 ram array i/o 1 ?i/o 8 row decoder a 7 a 6 a 5 a 4 a 3 a 0 column decoder a 9 a 10 a 11 a 12 a 13 a 14 sense amps data in drivers oe a 2 a 1 i/o 9 ?i/o 16 ce we ble bhe a 8 selection guide cy7c1020b-12 cy7c1020b-15 maximum access time (ns) 12 15 maximum operati ng current (ma) 140 130 maximum cmos standby current (ma) 3 3
cy7c1020b document #: 38-05171 rev. *c page 2 of 9 maximum ratings (above which the useful life may be impaired. for user guide- lines, not tested.) storage temperature ................................. ?65 c to +150 c ambient temperature with power applied............................................. ?55 c to +125 c supply voltage on v cc relative to gnd [1] .... ?0.5v to +7.0v dc voltage applied to outputs in high z state [1] ....................................?0.5v to v cc + 0.5v dc input voltage [1] .................................?0.5v to v cc + 0.5v current into outputs (low).... ..................................... 20 ma static discharge voltage......... .............. .............. ....... >2001v (per mil-std-883, method 3015) latch-up current ..................................................... >200 ma thermal resistance [ 4 ] operating range range ambient temperature [2] v cc commercial 0 c to +70 c 5v 10% electrical characteristics over the operating range parameter description test conditions cy7c1020b-12 cy7c1020b-15 unit min. max. min. max. v oh output high voltage v cc = min., i oh = ?4.0 ma 2.4 2.4 v v ol output low voltage v cc = min., i ol = 8.0 ma 0.4 0.4 v v ih input high voltage 2.2 6.0 2.2 6.0 v v il input low voltage [1] ?0.5 0.8 ?0.5 0.8 v i ix input leakage current gnd < v i < v cc ?1 +1 ?1 +1 a i oz output leakage current gnd < v i < v cc , output disabled ?1 +1 ?1 +1 a i os output short circuit current [3] v cc = max., v out = gnd ?300 ?300 ma i cc v cc operating supply current v cc = max., i out = 0 ma, f = f max = 1/t rc 140 130 ma i sb1 automatic ce power-down current?ttl inputs max. v cc , ce > v ih v in > v ih or v in < v il , f = f max 20 20 ma i sb2 automatic ce power-down current?cmos inputs max. v cc , ce > v cc ? 0.3v, v in > v cc ? 0.3v, or v in < 0.3v, f = 0 3 3 ma capacitance [ 4 ] parameter description test conditions max. unit c in input capacitance t a = 25 c, f = 1 mhz, v cc = 5.0v 8 pf c out output capacitance 8 pf parameter description test conditions tsop ii package soj package unit ja thermal resistance (junction to ambient) still air, soldered on a 3 4.5 inch, four-layer printed circuit board 50.55 56.31 c/w jc thermal resistance (junction to case) 15.8 32.9 c/w notes: 1. v il (min.) = ?2.0v for pulse durations of less than 20 ns. 2. t a is the case temperature. 3. not more than one output should be shorted at one time. du ration of the short circuit should not exceed 30 seconds. 4. tested initially and after any design or process changes that may affect these parameters.
cy7c1020b document #: 38-05171 rev. *c page 3 of 9 ac test loads and waveforms switching characteristics [ 5 ] over the operating range parameter description cy7c1020b-12 cy7c1020b-15 unit min. max. min. max. read cycle t rc read cycle time 12 15 ns t aa address to data valid 12 15 ns t oha data hold from address change 3 3 ns t ace ce low to data valid 12 15 ns t doe oe low to data valid 6 7 ns t lzoe oe low to low z [6] 0 0 ns t hzoe oe high to high z [6, 7] 6 7 ns t lzce ce low to low z [6] 3 3 ns t hzce ce high to high z [6, 7] 6 7 ns t pu ce low to power-up 0 0 ns t pd ce high to power-down 12 15 ns t dbe byte enable to data valid 6 7 ns t lzbe byte enable to low z 0 0 ns t hzbe byte disable to high z 6 7 ns write cycle [8] t wc write cycle time 12 15 ns t sce ce low to write end 9 10 ns t aw address set-up to write end 8 10 ns t ha address hold from write end 0 0 ns t sa address set-up to write start 0 0 ns t pwe we pulse width 8 10 ns t sd data set-up to write end 6 8 ns t hd data hold from write end 0 0 ns t lzwe we high to low z [6] 3 3 ns t hzwe we low to high z [6, 7] 6 7 ns t bw byte enable to end of write 8 9 ns notes: 5. test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5v, input pulse levels of 0 to 3. 0v, and output loading of the specified i ol /i oh and 30-pf load capacitance. 6. at any given temperature and voltage condition, t hzce is less than t lzce , t hzoe is less than t lzoe , and t hzwe is less than t lzwe for any given device. 7. t hzoe , t hzbe , t hzce , and t hzwe are specified with a load capacitance of 5 pf as in part (b) of ac test loads. transition is measured 500 mv from steady-state voltage. 8. the internal write time of the memo ry is defined by the overlap of ce low, we low and bhe / ble low. ce , we and bhe / ble must be low to initiate a write, and the transition of these signals can terminate the write. the input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. 90% 10% 3.0v gnd 90% 10% all input pulses 5v output 30 pf including jig and scope 5v output 5 pf including jig and scope (a) (b) output r 481 ? r 481 ? r2 255 ? r2 255 ? 167 equivalent to: thvenin equivalent 1.73v 30 pf rise time: 1 v/ns fall time: 1 v/ns
cy7c1020b document #: 38-05171 rev. *c page 4 of 9 switching waveforms read cycle no. 1 [9, 10] read cycle no. 2 (oe controlled) [10, 11] notes: 9. device is continuously selected. oe , ce , bhe and/or bhe = v il . 10. we is high for read cycle. 11. address valid prior to or coincident with ce transition low. previous data valid data valid t rc t aa t oha address data out 50% 50% data valid t rc t ace t doe t lzoe t lzce t pu high impedance t hzoe t hzbe t pd high oe ce icc isb impedance address data out v cc supply t dbe t lzbe t hzce bhe , ble current i cc i sb
cy7c1020b document #: 38-05171 rev. *c page 5 of 9 write cycle no. 1 (ce controlled) [12, 13] write cycle no. 2 (ble or bhe controlled) notes: 12. data i/o is high impedance if oe or bhe and/or ble = v ih . 13. if ce goes high simultaneously with we going high, the output remains in a high-impedance state. switching waveforms (continued) t hd t sd t sce t sa t ha t aw t pwe t wc bw data i/o address ce we bhe ,ble t t hd t sd t bw t sa t ha t aw t pwe t wc t sce data i/o address bhe ,ble we ce
cy7c1020b document #: 38-05171 rev. *c page 6 of 9 write cycle no. 3 (we controlled, oe low) switching waveforms (continued) t hd t sd t sce t ha t aw t pwe t wc t bw data i/o address ce we bhe , ble t sa t lzwe t hzwe truth table ce oe we ble bhe i/o 1 ?i/o 8 i/o 9 ?i/o 16 mode power h x x x x high z high z power-down standby (i sb ) l l h l l data out data out read ? all bits active (i cc ) l h data out high z read ? lower bits only active (i cc ) h l high z data out read ? upper bits only active (i cc ) l x l l l data in data in write ? all bits active (i cc ) l h data in high z write ? lower bits only active (i cc ) h l high z data in write ? upper bits only active (i cc ) l h h x x high z high z selected, outputs disabled active (i cc ) l x x h h high z high z selected, outputs disabled active (i cc )
cy7c1020b document #: 38-05171 rev. *c page 7 of 9 ordering information speed (ns) ordering code package diagram package type operating range 12 cy7c1020b-12vc 51-85082 44-pin (400-mil) molded soj commercial cy7c1020b-12vxc 44-pin (400-mil) molded soj (pb-free) cy7c1020b-12zc 51-85087 44-pin tsop type ii cy7c1020b-12zxc 44-pin tsop type ii (pb-free) 15 cy7c1020b-15zc 51-85087 44-pin tsop type ii CY7C1020B-15ZXC 44-pin tsop type ii (pb-free) package diagrams 44-pin (400-mil) molded soj (51-85082) 51-85082-*b
cy7c1020b document #: 38-05171 rev. *c page 8 of 9 ? cypress semiconductor corporation, 2006. the information contained herein is subject to change without notice. cypress semic onductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress product. nor does it convey or imply any license under patent or ot her rights. cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agr eement with cypress. furthermore, cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to re sult in significant injury to the user. the inclusion of cypress products in life-support systems application implies that the manu facturer assumes all risk of such use and in doing so indemni fies cypress against all charges. all product and company names mentio ned in this document may be the tr ademarks of their respective holders. package diagrams (continued) 44-pin tsop ii (51-85087) 51-85087-*a
cy7c1020b document #: 38-05171 rev. *c page 9 of 9 document history page document title: cy7c1020b 32k x 16 static ram document #: 38-05171 rev. ecn no. issue date orig. of change description of change ** 115439 05/09/02 dsg new data sheet *a 116869 08/21/02 dfp added l-power specifications. *b 426747 see ecn zsd changed the address of cypress semiconductor corporation on page #1 from ?3901 north first street? to ?198 champion court?. added thermal resistance table. updated the ordering information table and replaced the package name column with package diagram. *c 465909 see ecn nxr corrected typo in pin configuration (changed a 15 to a 4 ) removed l-power specifications updated the ordering information table
|
